| 摘要 |
PURPOSE:To make the adhesiveness to substrates good and make the photosensitivity of the photosensitive chalcogenide layer formed conspicuous by forming the specific amorphous chalcogenide layer to be doped with silver by a sputtering method. CONSTITUTION:An amorphous chalcogenide layer 22 having the composition of Se 75 to 95mole% and Ge 5 to 25mole% is provided to a film thickness 4000Angstrom or under by a sputtering method in inert gas of low pressure on a light transmittable substrate 21, after which the substrate is dipped in a solution containing Ag<+>, whereby the photosensitive chalcogenide layer 24 laminated with a silver layer 23 of an film thickness 100Angstrom or under on the layer 22 is formed. Next, the layer 24 is exposed through an optical mask 25, whereby the regions 22' doped with silver by the layer 23 are formed. Next, the layers 23 remaining on the regions other than the regions 22' are dissolved and removed by the first etchant which removes silver, after which the regions 21 other than the regions 22' are removed from the substrate 21 by the second etchant being an alkaline solution, causing the regions 22' to remain in pattern form on the substrate 21. |
