| 摘要 |
An integrated semiconductor circuit arrangement includes active and passive function elements in a semiconductor body and a high frequency a.c. voltage is used as a supply voltage for the function elements. A highly doped semiconductor substrate of one conductivity type carries a weakly doped layer, for example, of the same conductivity which has zones of the opposite conductivity therein. The substrate functions as an emitter for a plurality of transistors of which the doped zones serve as bases. Spaced co-planar layer sections bridge the base zones and serve as collectors. The collectors are either metal layers or semiconductor layers and in either case are covered with an insulating layer which carries a conductive layer for connection to a high frequency supply.
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