发明名称 |
Processing of photomask |
摘要 |
A laser beam of a pulse width 10 to 20 nanoseconds is irradiated and scanned relatively and two-dimensionally on a metal thin film formed on a transparent substrate from the transparent substrate side and through the transparent substrate with a superposition number of laser beam spots set up to at most 15 and to thereby remove a predetermined region of the metal thin film. The irradiated metal film begins to melt from the substrate side and is removed away explosively from the substrate, leaving the substrate substantially unaffected.
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申请公布号 |
US4190759(A) |
申请公布日期 |
1980.02.26 |
申请号 |
US19780922369 |
申请日期 |
1978.07.06 |
申请人 |
HITACHI LTD |
发明人 |
HONGO, MIKIO;NAKABAYASHI, JUNICHI |
分类号 |
B23K26/08;G03F1/00;H05K3/00;H05K3/02;H05K3/22;(IPC1-7):B23K9/00 |
主分类号 |
B23K26/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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