METHOD OF PRODUCING HOMOGENEOUSLY DOPED SEMICONDUCTOR MATERIAL OF '-CONDUCTIVITY
摘要
<p>A process for the production of substantially homogeneously doped p-conductive semiconductor material is described, which comprises subjecting the semiconductor material to be doped to irradiation with .gamma.-photons wherein the semiconductor material is germanium and wherein gallium atoms are produced as doping atoms on irradiation of the germanium with .gamma.-photons.</p>
