FORMATION OF MULTIICOMPONENT THIN FILM

摘要

PURPOSE:To obtain a thin film having a desired resistance value easily by compounding a plural number of materials(particularly Co and Mn) in a desired proportion and then by forming it into a thin film on a base plate by sputtering method. CONSTITUTION:A pulsral number of materials(preferably Co and Mn) which are to be formed into a thin film are compounded in advance in a desired proportion to obtain a metal material. The proportion is changed according to predetermined resistance values bexause the resistance value of thin film formed varies with different component proportions. The metal material is used as a target for sputtering method to form a thin film on the surface of a base plate. The control of the proportion of cimponents in this method is much easier than the conventional methods in which the proportion of components in two materials is constantly controlled by changing the respective evaporating temperatures of two evaporating sources so as to equalize their vapor pressures. This method is suitable for the manufacture of thermistor materials for thermistor and bolometer which serve as thermal detection elements.