| 摘要 |
PURPOSE:To improve high frequency characteristic by arranging a superconductor thin as compared with the depth of magnetic penetration or a conductor film thin as compared with the length of electron scattering between and in parallel with superconductor electrodes and filling up the electrodes together with semiconductor layers. CONSTITUTION:Semiconductor layers 41-4n and uniform thin films of superconductors 51-5n-1 are arranged between superconductor electrodes 1, 3 alternately. From holding each superconductor thin on an average as compared with the deptn of magnetic penetration, a tunnel current flows almost perpendicularly through the semiconductor layers between adjacent superconductors, and the tunnel current for Josephson junction element is determined by total thickness of the semiconductor layers without receiving any influence of the other short-circuit position. From using p type Ge for the semiconductor furthermore, a barrier with the metal is about 0.16eV to come in one of several tens in the case of oxidized film, and thus the capacity can be limited to one tenth from taking the element thickness about ten times. It is also effective to use a superconductor film thin as compared with the length of electron scattering for metal zone instead of superconductor. High frequency characteristic will extremely be improved from decrease in capacity. |
