| 摘要 |
<p>The thyristor is provided with an amplifier gate having a short release time and small switching loss as well as a high admissible speed for current and voltage rises. The incorporated auxiliary thyristor system is always triggered before the main thyristor system. A p+ formation (3) is formed at the surface of a semi conductor body and at the vicinity of the controlled zone of the base (6). This formation is located between the auxiliary transmitter (1) and the main transmitter (2). This zone touches the edge of the portion of the main transmitter which faces the auxiliary transmitter or engages such edge while forming with it a transition range p+ n+. </p> |
