发明名称 PHOTOSEMICONDUCTOR SWITCH CIRCUIT
摘要 <p>PURPOSE:To hold ignition sensitivity and dv/dt capacity compatible each other where resistance between gate and cathode of photo SCR is not given high at giving light ignition signals. CONSTITUTION:A luminous element 3 is ignited and SCR1 is radiated to ignition from applying a negative pulse signal to the input of logical element for ignition of photo SCR 1. In this case a luminous element 6 is not luminous due to a presence of inverter 7, and a phototransistor 5 is kept off. There works only a resistance RGK consequently between gate and cathode of SCR1, and hence it operates at high light ignition sensitivity from keeping the resistance RGK high. When input signal C does not work, the element 3 is not luminous but the element 6 gets luminous. The phototransistor 5 is therefore turned on, SCR1 is shortcircuited between cathode and gate, and thus dv/dt capacity is extremely improved. The dv/dt capacity can therefore be ketp high without deteriorating ignition sensitivity.</p>
申请公布号 JPS5524406(A) 申请公布日期 1980.02.21
申请号 JP19780096140 申请日期 1978.08.09
申请人 HITACHI LTD 发明人 SAGAWA AKIO;SUZUKI MASAYOSHI
分类号 H01H47/24;H01L31/12 主分类号 H01H47/24
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