SUBMICRON MOSFET DEVICE AND THE MANUFACTURING METHOD DOPING CHANNEL DOMAIN WITH HIGH DENSITY

摘要

The device relates to a submicron MOSFET for improving integration and speed characteristic by doping only channel area under the gate to prevent the increase of capacitance in junction. The switching characteristic can be improved without decreasing junction depth of source and drain, and doping depth of channel area can be governed by controlling the energy when doping the impurity.