发明名称 Lithographic resist and device processing utilizing same.
摘要 Copolymers of poly-alpha substituted acrylonitrile, e.g., methylacrylonitrile, manifest film forming properties, adhesion to usual substrates, sensitivity to actinic radiation, resolution, contrast, and other properties of significance for fine line lithographic use. Contemplated use includes fabrication of masks for manufacture of large scale integrated circuits. Stability to attack by ions and reactive chemicals, as well as thermal stability, are sufficient to permit use in direct processing of such circuits. Integrity of pattern features may be further assured by post-development treatment. Heating results in rearrangement to render the patterned resist more stable under a variety dry processing conditions.
申请公布号 EP0007976(A1) 申请公布日期 1980.02.20
申请号 EP19790101528 申请日期 1979.05.21
申请人 WESTERN ELECTRIC COMPANY, INCORPORATED 发明人 BOWDEN, MURRAE JOHN STANLEY;STILLWAGON, LARRY EDWARD;THOMPSON, LARRY FLACK
分类号 G03F7/039;H01L21/027;(IPC1-7):G03C1/72;G03F7/10 主分类号 G03F7/039
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