| 摘要 |
A process for forming tin oxide semiconductive heterojunction devices, for example solar cells, comprises providing and N-type silicon substrate (4), preferably having a resistivity less than 10 ohm-cm; forming an insulating layer (3) on at least part of the surface of said silicon substrate, said insulating layer being SiO2, Si3N4, GeO2, Al2O3 or TiO2; heating said substrate to provide a substrate surface temperature in the range of 300 DEG C to 400 DEG C, preferably 330 to 360 DEG C; and contacting said heated substrate in the presence of air with an atomized liquid solution of tin tetrachloride and an organic ester having a boiling point below about 250 DEG C while continuing said heating, said contacting being for a time at least sufficient to deposit a conductive coating of tin oxide (2) on the insulating layer on the substrate. …<??>Thereafter a first metal electrode (6) can be deposited onto the tin oxide layer and a second metal electrode (7) can be deposited onto a surface of the silicon substrate either not having the tin oxide coated, or from which that coating has first been removed. SiO2 is the preferred insulating layer material and ethyl acetate the preferred ester. The invention enables a solar cell to be produced having a sunlight conversion efficiency in the order of 10 to 12%. |
