| 摘要 |
PURPOSE:To reduce defect density in SiO2 by a heat treatment of SiO2 in the atmosphere containing O2 of the pressure more than 3 atm. CONSTITUTION:An SiO2 film is formed by a CVD process on a Si substrate, thereafter, being porvided a heat treatment in the O2 atmosphere of 10 atmospheric pressure at 450 deg.C for two hours. By such a processing, an excessive Si atom in the film becomes a value close to a chemical quantity value throuth binding with an O atom. Therefore, a defective density is reduced, a leak current also reduced, and a stable SiO2 film can be obtained. An O2 pressure, temperature of a heat treatment and time can not be determined in a common sense, but the processing would be performed by setting the O2 pressure over 3 atmospheric pressure and the temperature of the heat treatment more than 300 to 800 deg.C in view of influence of the heat to the characteristic or treatment time. |
