STATIC INDUCTION LOGICAL SEMICONDUCTOR DEVICE

摘要

PURPOSE:To reduce a comsumption current and improve a noise margin by integrating on a same chip the combined element of a SITL unit putting emphasis upon a speed and a SITL unit putting emphasis upon low comsumption current property. CONSTITUTION:A SITL unit 9 accompanied by a derivation diffusion and a SITL unit 10 accompanied by no derivation diffusion are integrated on a same chip. The unit 9 accompanied by the derivation diffusion has a small source feedback resistance and static characteristic wherein the current is difficult to be saturated. However, it has a reduced source feedback resistance and a great gm and excellent frequency characteristic. In order to take a balance of the performance in the element viewed from a standpoint as a system, a unit layer 10 having no source derivation diffusion layer 8 buried to a buried layer is provided on a same chip.