| 摘要 |
PURPOSE:To provide the subject device wherein, in forming a film on a substate in a vacuum chamber, the substrate is passed through respective processes while fitting the same to a transfer hand, thereby to produce the film of a high quality in a large amount with a high productivity. CONSTITUTION:A jig 22 in which a plurality of substrates 23 are accommodated is introduced in a vacuum chamber 20, and a door 28 is closed. Then, the interior of the vacuum chamber 20 is made vacuum in an exhaust system consisting of a diffusion pump 43 and a trap 42. A high frequency power source 16 is applied to the electrode 11 of a film fabricating chamber 10, and semultaneously the interior of the film fabricating chamber 10 is exhausted in high vacuum by the operation of a rotary pump 58. Then, a sputtering gas is introduced into the chamber 10 from a gas introduction system 52 and discharged to cause a target 13 to be in a sputtering state. A predetermined number of substrates 23 are taken out of the jig 22 by a substrate transfer hand mechanism 30, and transferred into the film fabricating chamber 10 thereby to cause a film of a predetermined thickness to adhere onto the surface. A substrate 23 sputtered for a predetermined tims is again accommodated in the jig 23 while being fitted to a transfer hand 31, and is transferred in any of left and right directions 27, thereafter the subsequent substrate 23 being treated by the above described operations. |
