| 摘要 |
PURPOSE:To improve interfacial characteristic between SiO2 group and semiconductor, by heating silicon, silicon compound or a silicon oxide membrane in an atmospheric gas which is a mixture of carbon fluoride gas and oxidized gas. CONSTITUTION:By mixing CF4 gas into an atmosphere of oxidized gases such as O2, CO2 and NOx, etc., Si compound and Si are heated. Inert gases such as N2, Ar and He, etc. are used as carried gases. It is possible, by doing so, to obtain a good- quality silicon oxide type membrane without allowing quartz reacting tube and SiO2 membrane to eroded.
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