发明名称 |
HALBLEITER-EMITTER FUER IONENQUELLEN SOWIE VERFAHREN UND VORRICHTUNG ZU SEINER HERSTELLUNG |
摘要 |
A semiconductor ion emitter for a mass spectrometer, comprises an electrode having semiconductor whiskers provided on the conductive surface of a base. A process for manufacturing such semiconductor ion emitter, includes steps of evaporating gold onto a wire having a diameter of about 60 mu m, preheating the coated wire, and supplying a gas containing the semiconductor for growth of the whiskers on the gold plated wire. An apparatus for such process comprises a vacuum vessel for enclosing the wire, means for controllably heating the wire and means for controllably supplying a gas containing the semiconductor into the vacuum vessel. |
申请公布号 |
DE2906285(A1) |
申请公布日期 |
1980.02.14 |
申请号 |
DE19792906285 |
申请日期 |
1979.02.19 |
申请人 |
PRESIDENT OF OSAKA UNIVERSITY |
发明人 |
MATSUO,TAKEKIYO;KATAKUSE,ITSUO;MATSUDA,HISASHI |
分类号 |
H01J1/02;H01J49/16;(IPC1-7):H01J39/35;B01J17/28;H01J3/04 |
主分类号 |
H01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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