Photomask for use in integrated circuits - comprising glass plate with transparent conductive layer of indium oxide and chromium layer formed on it

摘要

Photo mask for use in integrated circuit comprises a glass plate with a flat surface, a transparent conductive layer (I) of indium oxide formed on the glass plate, and a chromium metal layer formed on (I). (I) has a transmissivity of >70% to light with a wavelength of 400 mu, a surface resistance of 1 k OMEGA/cm2 and a thickness of 10-500 m mu. The thickness of the chromium layer is 10-500 m mu. The mask has a long lifetime and a high mechanical strength.