Ion implantation doping of semiconductor - for diode, transistor or solar cell prodn. using simultaneous doping at front and back

摘要

In a semiconductor doping process by ion implantation, several implantation processes are carried out simultaneously pref. >=1 on the front and >=1 on the back. Specifically a diode with a highly doped back contact is produced by implantation of ions of a pentavalent element into the front and a trivalent element into the back of a p-Si semiconductor or of a hexavalent element into the front and a divalent element into the back of p-GaAs. At least 2 different types of ions can be implanted simultaneously on the same side, e.g.-ions of 2 pentavalent elements into the front of p-Si or 2 trivalent elements into the front of n-Si. Process is used specifically for the mfr. of a pn-junction (diode) or transistor and esp. solar cells. Complete semiconductor structures can be doped quickly and economically in a single stage.