END POINT CONTROL IN PLASMA ETCHING

摘要

The end point in plasma etching is detected by monitoring the optical emission from the plasma, selecting a particular optical emission line and detecting a substantial variation in the intensity of the emission. This indicates a change in material being etched and thus the completion of etching of one material, or the beginning of etching of another material. It is also applicable to removing, or etching, photoresist material. - i