发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To deposit Ni or Ni alloy layer and Au-Ge-Sb alloy layer on a contact surface of a semiconductor device and adhere it firmly to a floor. CONSTITUTION:After Ni layer and Au-Ge-Sb metal alloy layer are evaporated onto contact surface of Si basic plate, it is divided into chips and soldered to a silver plated floor. This constitution allows precise positioning for soldering by using Au- Ge-Sb layer without using gold foil and chip division is easy for non-using of Si-Au cristal and further adhesion is very strong.
申请公布号 JPS5519807(A) 申请公布日期 1980.02.12
申请号 JP19780091417 申请日期 1978.07.28
申请人 发明人
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
代理机构 代理人
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