发明名称 METHOD OF MANUFACTURING INTEGRATED CIRCUIT
摘要 The sharp features that appear on metallization patterns (12) defined by conventional etching processes are eliminated by instantaneous melting with short laser or electron beam pulses. Flow is minimized due to the brevity of the period of the molten state but surface tension removes the sharp corners. With polysilicon, metallization conductivity is also improved. <IMAGE>
申请公布号 JPS5519895(A) 申请公布日期 1980.02.12
申请号 JP19790078236 申请日期 1979.06.22
申请人 WESTERN ELECTRIC CO 发明人 GEORGE K CELLER;THOMAS EDWARD SEIDEL
分类号 H01L21/3205;H01L21/263;H01L21/268;H01L21/302;H01L21/3065;H01L21/321;H01L21/768;H01L23/525 主分类号 H01L21/3205
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