发明名称 |
METHOD OF MANUFACTURING INTEGRATED CIRCUIT |
摘要 |
The sharp features that appear on metallization patterns (12) defined by conventional etching processes are eliminated by instantaneous melting with short laser or electron beam pulses. Flow is minimized due to the brevity of the period of the molten state but surface tension removes the sharp corners. With polysilicon, metallization conductivity is also improved. <IMAGE> |
申请公布号 |
JPS5519895(A) |
申请公布日期 |
1980.02.12 |
申请号 |
JP19790078236 |
申请日期 |
1979.06.22 |
申请人 |
WESTERN ELECTRIC CO |
发明人 |
GEORGE K CELLER;THOMAS EDWARD SEIDEL |
分类号 |
H01L21/3205;H01L21/263;H01L21/268;H01L21/302;H01L21/3065;H01L21/321;H01L21/768;H01L23/525 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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