| 摘要 |
PURPOSE:To provide oppositely conductive range on the surface of a substrate with Si wiring for preventing current leakage between said substrate and wiring when making opening in Si wiring film. CONSTITUTION:Oppositely conductive type range 3 is selectively formed on the one-conductive substrate 1 having formed field insulating film 2. Further, insulating film 4 is formed on active range, poly-Si 5 is subjected to selective etching removal, and said film 4 is kept together with the remainder portion of said poly-Si 5 on layer 3 through the etching that is made using said poly-Si 5 as mask. Thereafter, oppositely conductive type range 6 is formed, insulating film 7 is deposited on said substrate 1, and the portions over said layer 6 and poly-Si 5 are selectively removed for the exposure thereof. Said layer and poly-Si 5 are electrically coupled by conductive layer 8. The range 3 whose conduction is made oppositely to that of said substrate 1 is provided directly under said film 4. Therefore, leak generation can be prevented between said substrate 1 and layer 8 even though said poly-Si 5 and film 4 are corroded when the opening of said film 7 is provided on said poly-Si 5. |
