| 摘要 |
PURPOSE:To load Ni or Ni alloy layer, Au-Ge-Sb alloy and one of Au, Ag and Pt onto a contact surface of semiconductor device and joint firmly to a floor. CONSTITUTION:After Ni layer, AuGe(12wt%)Sb(0.1wt%) alloy and Au layer are evaporated onto contact surface of Si basic plate, it is divided into chips. The chips are soldered to a silver plated floor. According to this method, it is soldered by Au-Ge-Sb alloy without using gold foil and consequently positioning is precise and further as Au on the surface protect oxidation of Au-Ge-Sb alloy, it is jointed firmly. And also as Au-Si cristal is not formed, chipping work is facilitated. |
