| 摘要 |
PURPOSE:To faciliate chip division and firmly jointing a contact surface of a semiconductor device to a floor by loading Cu, Al, V, Mo and so on layer, Ni or its alloy layer and Au. Ge. Sb alloy layer to the contact surface of the semiconductor device. CONSTITUTION:One of Cu, Al, V, Mo, and Ni-Cr alloy is disposed on a contact surface of Si basic plate and then after Ni or Ni alloy and Au. Ge. Sb alloy is evaporated, it is devided into chips. Next, it is soldered to silver-plated floor. This method allows precise positioning by non-using of gold foil and further easy distribution by non-using Au-Si cristal to the basic plate and then adhesive intensity is sufficiently high. |
