发明名称 MOSSTYPE DYNAMIC MEMORY
摘要 PURPOSE:To reduce noises and to make the size small by separating a memory circuit and other elements by providing an insulating layer to the depth of 1mum or more from the surface of a substrate. CONSTITUTION:Regions 1 and 2 are formed on a same substrate 9. A memory cell 3 is formed on the region 1; and a gate 4, a source 5, and a drain 6 are formed on the region 2. An insulating layer 7 is formed by ion implantation and the like so that it reaches the point sufficiently deep from the surface, thereby minority carriers which are generated in the substrate 9 and are capable of moving in the substrate 9 are prevented from moving into the region 1. In this constitution, noises are eliminated, holding characteristics can be enhanced accordingly, and the size can be reduced.
申请公布号 JPS5518005(A) 申请公布日期 1980.02.07
申请号 JP19780089975 申请日期 1978.07.25
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 FURUYAMA TOORU
分类号 G11C11/401;H01L21/8242;H01L27/10;H01L27/108;H01L29/78 主分类号 G11C11/401
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