DRY ETCHING PROCESS USING PLASMA

摘要

Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis.