| 摘要 |
PURPOSE:To reduce noises and to make the size small by providing a layer, whose density of charge-recombination-center presence is higher than that of a semiconductor substrate, between a memory cell and a circuit element other than the memory cell. CONSTITUTION:Regions 1 and 2 are formed on a same substrate 9. A memory cell 3 is formed on the region 1; and a gate 4, a source 5, and a drain 6 are formed on the region 2. A conductive layer 7, which is for example a metal-diffused layer, and whose recombination-center density is high, is formed so that it reaches the point sufficiently deep from the surface of the substrate, thereby minority carriers which are generated in the region 2 and are capable of moving in the substrate 9 are prevented from moving into the region 1. In this constitution, noises are eleminated, holding characteristics can be enhanced accordingly, and the size can be reduced. |
