| 摘要 |
PURPOSE:To form a film of the same conductive type having a concentration higher than a semiconductor on the back surface of a semiconductor element pellet, and therafter to bond said semiconductor element to the base conductor of a package. CONSTITUTION:The back surface of a p-type substrate 1 is coated with a p<+>-type polysilicon 4 by a CVD method. Thereafter, a semiconductor element is formed as usual. then, said semiconductor element is bonded through an Au-Si eutectic alloy to a package 2. According to this method, the semiconductor element is not impaired by the polysilicon coating temperature and heat treatment for the carrier activation after coating, but it is possible to directly apply polysilicon to the semiconductor substrate. |
