| 摘要 |
A reference voltage generator useful in a memory having memory locations capable of storing more than two states provides references which are used to determine which state is stored in a selected memory cell. The output of the reference voltage generator is connected to comparator circuitry which also receives the output from the selected memory cell. The reference voltage generator generates each one of the required voltages every time a row is selected in the memory. The comparator circuitry serves as a sense amplifier and provides a memory output.
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