发明名称 POSITIVE TYPE RADIATION SENSITIVE COMPOSITION
摘要 PURPOSE:To raise sensitivity of a positive type radiation resist without impairing this intrinsic characteristics, as well as to enhance dry etching resistance, by adding to the resist a metal halide soluble in a solvent for the resist. CONSTITUTION:A metal halide, such as ZnI1, ZnF2, MnF2, SbBr3, or SnI4, soluble in a resist solvent, such as toluene or methyl cellosolve, is added to a positive type radiation sensitive resist, such as polymethylmethacrylate in an amount of 1 to 30% by weight. This mixture is dissolved in the resist solvent to form a positive type radiation sensitive composition useful as an X-ray sensitive resist.
申请公布号 JPS5517112(A) 申请公布日期 1980.02.06
申请号 JP19780088978 申请日期 1978.07.21
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 SHIMAZAKI YUUZOU;KOUDA MASANOBU
分类号 G03F7/004;G03C1/72;G03F7/039;H01L21/027;H01L21/312;H05K3/06 主分类号 G03F7/004
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