| 摘要 |
PURPOSE:To lower the price and to increase a turn-off gain by connecting a diode between the gate and cathode of a gate turnoff thyristor with the P-type emitter region at the anode side made into short-emitter structure. CONSTITUTION:On the top surface of N-type base region 21, P-type base region 22 is formed and on part of its surface, N-type emitter region 23 is formed; on the reverse surface of N-type base region 21, short emitter region 26 is formed which consists of alternate P-type emitter regions 24 and N-type regions 25. On surfaces of P-type base region 22, N-type emitter region 23 and short emitter region 26, gate electrode 27, cathode 28 and anode 29 are formed and between gate electrode 27 and cathode electrode 28, diode 31 is connected. |
