发明名称 MANUFACTURE OF THIN FILM OF ZINC OXIDE
摘要 PURPOSE:To less strain produced in the crystal of a zinc-oxide coating by sputtering substances, smaller in ion radius than zinc, together with zinc in a manufacturing method for a thin film of zinc oxide by sputtering zinc. CONSTITUTION:At the same time as zinc, beryllium, magnesium, boron, silicon, and gallium are sputtered which are smaller in ion radius than zinc. When those elements immerse in the crystal of the zinc-oxide thin film by substituting for zinc into solid solutions, they lessen strain produced in the thin film because of smaller ion raduis. The glass substrate can therefore be prevented from cracking and piezoelectric characteristics will never deteriorate.
申请公布号 JPS5516554(A) 申请公布日期 1980.02.05
申请号 JP19780089163 申请日期 1978.07.21
申请人 TOKO INC 发明人 SAKAKURA MITSUO;TAKAKU TETSUO
分类号 H03H3/08;C03C17/245;C23C14/08;H01L41/18;H01L41/39 主分类号 H03H3/08
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