| 发明名称 |
Growth of single crystal bismuth silicon oxide |
| 摘要 |
Method of growing single crystal of bismuth silicon oxide from a melt of Bix Si O1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.
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| 申请公布号 |
US4187139(A) |
申请公布日期 |
1980.02.05 |
| 申请号 |
US19770805539 |
申请日期 |
1977.06.10 |
| 申请人 |
U S PHILIPS CORP |
发明人 |
BRICE, JOHN C;HILL, OWEN F;PRATT, RONALD G |
| 分类号 |
C30B11/00;C30B13/00;C30B15/00;G02F1/00;(IPC1-7):B01J17/18;C01G29/00 |
主分类号 |
C30B11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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