METHOD OF MANUFACTURING SINGLE CRYSTALS BY GROWTH FROM THE VAPOUR PHASE

摘要

PHF 75525C A method of obtaining, by crystal growth from a vapour phase, single crystals constituted mainly of gallium nitride. The growth is effected during synthesis of gallium nitride which is obtained by the reaction of gallium halide with ammonia immersed in a carrier gas in an open reactor. The method is characterized in that, during at least a part of the growth of the crystal, free hydrochlor?s acid under a partial pressure of 2 to 50% of the overall pressure is introduced into the reaction and deposition zone.