| 摘要 |
PURPOSE:To raise a gate sensibility without causing reduction of dv/dt amount by providing in a gate portion a region for preventing the current making no contribution to a trigger of a gate current to utilize the gate current effectively. CONSTITUTION:A n-type region nG is provided in a PB layer on the circumference of a gate electrode G and a junction J4 is provided between the PB layer and nG region. In this construction, when a gate voltage is impressed onto the intermediate between a gate G and a cathod K to turn the gate positive, because of the presence of the nB region, the current component of the current flowing through the junction Jl between the PB layer and nE layer is blocked, only the current component passing through the interior is appeared, and a SCR is turned on by a small gate current. Because the sensibility of the gate can be raised without increasing an injection efficiency of the junction Jl, the dv/dt amount can be sustained at a normal level. A nG region is formed together with the nE layer. |
