| 摘要 |
PURPOSE:To form resist micropatterns having high resolution and high adhesivity and good performance in etching, by forming a resist layer with a specified copolymer in ionized radiation lithography. CONSTITUTION:A substrate is coated with the solution of a copolymer (10 to 30wt.% in monochlorobenzene, or the like) of a monomer of formula I (R1 is an alkyl group containing at least one of Br or epoxy), such as 2,3-dibromo-n-propyl methacrylate and a monomer of formula II (R2 is alkyl), such as methyl methacrylate. The coated solution is heated for film forming, irradiated through a quartz mask by far ultraviolet rays, or the like, and developed to form a positive resist pattern. This is again heated to 100 deg.C, further heated under 180 deg.C N2 atmosphere, and then etched. Since the etched pattern thus obtained is superior, this is used for fabricating highly integrated semiconductor members, etc. |
