| 摘要 |
PURPOSE:To avert an influence due to emission into a substrate of a minority carrier increasing in accordance with contraction of a device by forming a recombination center in the substrate certainly in a simplified process. CONSTITUTION:A SiO2 2 and Si2N4 3 are laminated on a p-type Si substrate 1, after the film 3 is removed by a resist 4, A B-ion injection layer 5 is formed for prevention of reversion. A resist 6 is newly provided and a B-ion injection layer 7 with a high density. The resist 6 is removed and wet oxidization is performed to make a field oxidization film 8. In this processing, a lamination recession 9 with a high density cotaining an impurity ion as a generation neuclear is generated in the high density ion injection layer 7. The recession 9 is turned to a recombination center to catch the minority carrier emmited into the substrate certainly and permit a stable circuit operation. Successively, the film 2 and 3 are removed, a gate oxidization film 10, a poly Si electrode 11 and n<+>layer 12 and 13 are formed, and an electrode is selectively formed after covering it with the insulation film. |
