发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To effect a pattern alignment of a mask even if the step difference of a film thickness may be slight by making use of the interference of a light in the thin film. CONSTITUTION:When a light of wavelength of lambda is projected to a thin film having a thickness d and a defractive rate n, the interference of the light is canceled if 2d=(2k-1/2).lambda/n. cap. When the light with the wavelenght lambda1 is projected to a portion A with the thickness d1 of an oxidization film 2, the portion A is turned to black color, but any interference is not caused in a portion B and the light with the wavelength lambda1 is appeared only. Therefore, a pattern alignment for a mask 4 can be performed. The light having an appropriate wavelength can be obtained by inserting a colored glass before a white light source. According to this construction, the desirable pattern alignment capable of discrimination cna be established by making use of the interference due to a signal color light even if the discrimination of the film surface can not fully made due to the surface step.
申请公布号 JPS5515254(A) 申请公布日期 1980.02.02
申请号 JP19780088593 申请日期 1978.07.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKI YOUICHIROU;EMOTO HIROAKI
分类号 H01L21/30;H01L21/027;H01L21/302 主分类号 H01L21/30
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