| 摘要 |
PURPOSE:To reduce the logic amplitude through a simple constitution and thus to realize the high performance by connecting the common drain of the coupling MOS transistor to the source of the load MOS transistor as well as to the gate electrode of driving MOS transistor. CONSTITUTION:The gate electrode is earthed and the drain electrode is connected in common with the source elctrode used as the input terminal for coupling depression-type MOS transistors Tr21-23. While for load depression-type MOS Tr11, the source electrode is connected to the gate electrode along with the drain electrode connected to the power source. And the source electrode is earthed for driving enhancement-type MOS Tr24 respectively. Then the common drain junctions of Tr21-23 are connected to the source electrode of Tr11 as well as to the gate electrode of Tr24 with the drain electrode of Tr24 used as the output terminal. Thus the logic amplitude can be reduced through a simple constitution, at the same time realizing the high performance. |
