发明名称 |
PROCESS FOR PREPARING DIAMOND THIN FILM AND P-TYPE DIAMOND SEMICONDUCTOR |
摘要 |
A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD. |
申请公布号 |
EP0161829(A3) |
申请公布日期 |
1986.12.30 |
申请号 |
EP19850302776 |
申请日期 |
1985.04.19 |
申请人 |
IMAI, YOSHIO |
发明人 |
IMAI, YOSHIO;SAWABE, ATSUHITO;INUZUKA, TADAO |
分类号 |
C30B25/00;C23C16/27;C30B25/02;C30B25/10;C30B29/04 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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