| 摘要 |
PURPOSE:To obtain a solar cell for making the build-up of isolation easy by permitting a plurality of island regions separated in the insulated separation region to grow on the insulated film layer fromed by an ion implantation within the semiconductor substrate and by inter-connecting in series the element regions provided therein. CONSTITUTION:After an oxygen ion has been shot to the surface of a N-type Si substrate 11, the substrate 11 is annealed at 1100 deg.C to from an insulated layer 12 in the interior of the substrate 11. Successively, a N-type layer 13 is epitaxial growed on the full surface of the substrate 11 to separate the layer 13 in the island state by diffusing and forming a P-type region 14 on the layer 13. Thereafter, a shallow P-type region 15 is diffused and formed in the island-shaped layer 13 to be covered with an insulated film 16 over the full surface therof, a conecting line 17 is provided by giving an opening to the region 15 to provide a connecting line 17 for it and the solar cell elements manufactured are connected in series to each other. |
