| 摘要 |
<p>PURPOSE:To make the surface of III-V familty compound inactive by providing for the semiconductor surface, GaOxNy film or AlOxNy film, or their mixed Gax, AlyOxNy, film as a novel inactive film. CONSTITUTION:A specific resistance of GaOxNy film and the surface foundamental density of III-V family semiconductor interface and GaOxNy film depend heavily upon O/N(x/y) of the film. By making use of such a nature, the GaOxNy film having a low ratio of O/N is laminated initially on the substrate of the III-V family semiconductor to form the GaOx1Ny1 of a first layer, successively the GaOx2Ny2 film having a greater ratio of O/N is covered thereon. In this case, the specific resistance and interface foundamental density for the coved layer of the insulated film can be considerably improved to obtain the desirable insulated film. As well known, the GaOxNy film, vapor attachment of GaOxNy having a predetermined ratio of x/y and an independent control for the reaching rate to the substrate of GaN and Ga2O3 from the sources.</p> |
