| 摘要 |
PURPOSE:To make it possible to control current flowing between source and drain regions, by having injected impurity ions in a part or the whole of a channel part existing between source region and drain region. CONSTITUTION:N-type epitaxial layer 202 is grown on N-type semiconductor base 201, and here are formed P-type gate region 203 and N-type source region 204 by diffusion. Next, P-type impurity ions are diffused into channel part 205 produced between these regions. Here, a fixed value is set by controlling the concentration of the impurity. By this, it is possible to vary the width of a depletion layer expanding from gate region 203 and the potential, so that it is possible to control current flowing between source and drain regions. Consequently, the channel width which expresses the characteristics of SIT element becomes large. |
