发明名称 THIN FILM MANUFACTURING APPARATUS
摘要 PURPOSE:To reduce dispersion in film thickness in the radius direction of a susceptor, by obtaining the distribution of the thickness of a thin film based on heat radiation ratio in two wavelength bands, which are obtained by measuring infrared radiation rays reflected by various points on a substrate by a dichroic radiation thermometer, and based on the displacement of a reflecting mirror, and equalizing the distribution of the thickness of the thin film, which is formed based on the film thickness distribution data. CONSTITUTION:Infrared radiation rays are emitted from a substrate 2 through a quartz window 7. The rays are reflected by a rotary reflecting mirror 8, which is provided over the quartz window 7, and sent to a dichroic radiation thermometer 9. The dichroic radiation thermometer 9 and the rotary reflecting mirror 8 are connected to a computer 10. By the processing in the computer 10, the distribution data of the thickness of a thin film on the substrate in the circumferential direction and the radial direction of a susceptor 1 is obtained. Based on the thickness distribution data of the thin film, a signal is sent to a flow rate regulating valve 11, which is provided in a raw- material-gas feeding line. The flow rate of the raw material gas 6 is regulated, and the thickness distribution of the thin film is adjusted.
申请公布号 JPS62144318(A) 申请公布日期 1987.06.27
申请号 JP19850286211 申请日期 1985.12.19
申请人 FUJITSU LTD 发明人 NAGASAWA KAZUTOSHI
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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