发明名称 Level conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit elements
摘要 In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS-TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
申请公布号 US4689503(A) 申请公布日期 1987.08.25
申请号 US19840575567 申请日期 1984.01.31
申请人 HITACHI, LTD. 发明人 SUZUKI, YUKIO;MASUDA, IKURO;IWAMURA, MASAHIRO;KADONO, SHINJI;URAGAMI, AKIRA;YOSHIMURA, MASAYOSHI;MATSUBARA, TOSHIAKI
分类号 H03K19/00;H03K19/0175;H03K19/018;H03K19/094;H03K19/0944;H03K19/177;(IPC1-7):H03K19/01;H03K19/013;H03K19/017 主分类号 H03K19/00
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