REVERSIBLE OPTOELECTRONIC SEMICONDUCTOR DEVICE

摘要

Electroluminescent or photodetector optoelectronic semiconductor device having a P-N junction and a transparent surface region, for a narrow wavelength range and very low voltage. The surface region is localised in a layer of the same material which is less doped, the depth of the junction is determined as a function of the diffusion length of the minority carriers and these latter are determined as a function of the absorption length. In photodetection the depletion zone is limited. Application to transmission by photocoupling in the two directions. Symmetrical reversible photocouplers.