发明名称 GLASS SEALING TYPE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PURPOSE:To increase joining strength betwen an electrode and a lead and also to decrease thermal resistance of the joint by forming a wide soldered layer stretching from the electrode end surface to the surrounding glass section. CONSTITUTION:Device, composed by connecting molybdenum electrodes 32 and 32 to top and bottom surfaces of a diode pollet 31, is provided in plural number on the same level keeping distance between them, a glass 33 is formed in such a manner that all of these devices are embedded, and end surfaces of all the electrodes are exposed by lapping. And then, a soldered layer 34 is formed, and thus formed layer is divided in longitudinal direction to obtain plural number of the devices equipped with soldered layer 34 on top and bottom surfaces and covered by the glass 33. And then, a required prodect is obtained by soldering copper lead wires 35 and 35 to the end surfaces of the electrodea 32 through the soldered layers 34 and 34.</p>
申请公布号 JPS5512762(A) 申请公布日期 1980.01.29
申请号 JP19780085770 申请日期 1978.07.14
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 ARIMATSU SHIYUUICHI
分类号 H01L23/29;H01L21/56;H01L23/31 主分类号 H01L23/29
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