| 摘要 |
PURPOSE:To reduce the driving capacity, by making unnecessary the control of electrical connection and disconnection between the bit line and the write-in data line with the readout/write-in signal, through the connection of the gate electrode of the enhancement type MOSFET to the bit line. CONSTITUTION:In the E type MOSFET-Q31 and Q32, the source electrodes are connected to the bit lines B1,B2, the drain electrodes to the write-in data lines W1,W2 via MOSFET-Q33.Q34, and the gate electrodes to the lines B1 and B2, via MOSFET-Q37, Q38. Further, Q31 and Q32 electrically isolate the lines W1, W2 from the lines B1, B2 at readout state and electrically connect the lines W1, W2 and the lines B1, B2 at write-in state. |
