| 摘要 |
<p>PURPOSE:For preventing the crack of the Ni film to be provided between the Cu coats arranged between an electrode and a semiconductor element to form the electrodes to be provided on the both sides of said element by using the copper matrix containing spiral C fiber. CONSTITUTION:The support electrodes 2 and 2a of Cu-C complex filter material are soldered on the both sides of an Si semiconductor element 1. Said electrode 2 is soldered on a lower electrode 3, a lead wire 4 is fitted on said electrode 2a, and said element 1 is surrounded with a cylindrical pipe 5. In this construction, said support element electrodes 2 and 2a are made through the process consisting forming a Cu matrix 8 by impregnating about 9mum spiral Cu-plated C fiber 9 with the Cu powder slurry made of Cu powder and methly cellulose, depositing thicker Cu cost layer 7 than 15mum on the whole surface of said matrix 8, and forming Ni plating layer 6 thereon. No crack occurs to said Ni layer 6 since spiral complex Cu-30 capacity % C fiber material is contained in said Cu matrix 8.</p> |
