| 摘要 |
A field effect transistor of the V-MOST type in which the channel region comprises a more highly doped part which adjoins the source zone and a lower doped part which surrounds said region, said channel region adjoining the surface and surrounded by an insulation diffusion. The lower-doped part is depleted from the pn junction with the low-doped drain region up to the surface at a voltage which is lower than the breakdown voltage. |
